针对商用低精度惯性测量单元具有高成本、制造工艺复杂、废弃后污染环境、不能生物降解等缺点，提出一种低成本、可生物降解的木制惯性测量单元。该设计包含平衡振子和非平衡振子单元，分别用于测量3轴加速度和3轴角加速度。采用激光诱导石墨烯的工艺在木梁上制备应变传感器阵列，并形成多组惠斯顿电桥测量电路。结果表明：加速度方面，X轴灵敏度为0.006 mV/g，Y轴灵敏度为8.695×10^-4 mV/g，Z轴灵敏度为0.200 mV/g；角加速度方面，X轴灵敏度为0.285 mV/（rad/s²），绕Y轴旋转的灵敏度为0.305 mV/（rad/s²），绕Z轴旋转的灵敏度为0.765 mV/（rad/s²）。与有限单元法仿真结果对比，实验测量误差在10%以内，且具有良好的重复测量精度。该惯性测量单元在木制船舶、木制载具、木制家具等方面具有潜在的应用前景。

AlGaN-based light-emitting diodes (LEDs) on offcut substrates enhance radiative emission via forming carrier localization centers in multiple quantum wells (MQWs). This study introduces the carrier transport barrier concept, accessing its impact on the quantum efficiency of LEDs grown on different offcut sapphire substrates. A significantly enhanced internal quantum efficiency (IQE) of 83.1% is obtained from MQWs on the 1° offcut sapphire, almost twice that of the controlled 0.2° offcut sample. Yet, 1° offcut LEDs have higher turn-on voltage and weaker electroluminescence than 0.2° ones. Theoretical calculations demonstrate the existence of a potential barrier on the current path around the step-induced Ga-rich stripes. Ga-rich stripes reduce the turn-on voltage but restrict sufficient driving current, impacting LED performance.

为了测量复杂流动速度分布，基于分子标记示踪原理建立了飞秒激光电子激发标记（FLEET）测量装置。开展了超声速混合流动速度分布测量实验，获得了马赫数3.0射流分别与马赫数2.0，2.5及2.9射流形成的混合流动速度分布的测量结果；结合大涡模拟和纹影实验，显示了混合层的流场结构。利用延迟10 μs的荧光标记线与荧光基线的位移差，分析得出实验中FLEET速度测量的不确定度优于5 m/s；在高低速主流区，FLEET测量的速度结果与计算结果基本一致；在混合层，FLEET实现了较大梯度的速度分布测量，混合层的厚度与纹影实验结果符合较好。实验表明，建设的FLEET装置具有较强的工程实验能力，能够实现超声速混合层等复杂流动速度的分布测量。

Fifteen periods of Si/Si_0.7Ge_0.3 multilayers (MLs) with various SiGe thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition (RPCVD). Several methods were utilized to characterize and analyze the ML structures. The high resolution transmission electron microscopy (HRTEM) results show that the ML structure with 20 nm Si_0.7Ge_0.3 features the best crystal quality and no defects are observed. Stacked Si_0.7Ge_0.3 ML structures etched by three different methods were carried out and compared, and the results show that they have different selectivities and morphologies. In this work, the fabrication process influences on Si/SiGe MLs are studied and there are no significant effects on the Si layers, which are the channels in lateral gate all around field effect transistor (L-GAAFET) devices. For vertically-stacked dynamic random access memory (VS-DRAM), it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical thickness. These results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires, nanosheet L-GAAFETs, and DRAM devices.

为了实现空间机器人捕获航天器及辅助对接操作的柔顺化，对航天器对接装置的输出力与位姿的精确控制进行了研究，且在关节电机与机械臂之间添加了弹簧阻尼缓冲装置，以防止接触、碰撞时产生的巨大冲击力造成关节破坏。首先，结合Newton第三定律、捕获点的速度约束及闭链系统的几何约束，获得了捕获航天器后的混合体系统动力学方程，通过动量守恒关系计算了碰撞冲击效应与冲击力。接着，通过航天器对接装置相对载体坐标系的运动学关系，建立了对接操作过程中的阻抗模型。然后，设计了一种鲁棒自适应双层滑模控制策略，其与阻抗控制相结合，采用力加载随动控制系统实现对接装置的位姿与输出力的精确控制，以降低接触、碰撞时的冲击力。该控制策略具有双层滑模结构，其第一层保证混合体系统在有限时间内收敛，第二层用于解决控制的高增益问题。最后，通过Lyapunov定理证明了系统的稳定性；利用数值仿真验证了所提控制策略的有效性。仿真结果表明，在给定的速度下缓冲装置最大可将碰撞冲击力矩降低46.78%，输出力的控制精度优于0.5 N，位置、姿态的控制精度优于10^-3 m，0.5°。